IWJT2018  Mar.8- 9, 2018 Shanghai, China

18th International Workshop on Junction Technology
Fudan University


 

 

IWJT-2018 Keynote Presentations

 

 
 

 

 

 

 

IWJT-2018 Invited Presentations

 

Activation of High-temperature-implanted Phosphorus Atoms in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Annealing

Hiroaki Hanafusa, Hiroshima University, Japan

 
Activation Trends in Millisecond Annealing of Heavy n-Type Doping of Silicon

Paul Timans, Mattson Thermal Products GmbH, Germany

 
Advanced Implant Application for 7nm and Beyond

David Zou, AMAT, USA

 
Analyses of 3D atomic arrangements of impurity atoms doped in Silicon by spectro-photoelectron holography technique

Kazuo Tsutsui, Tokyo Institute of Technology, Japan

 
Au-based and Au-free Ohmic Contacts to AlGaN/GaN Structures on Silicon or Sapphire Substrates

Hong-Yu Yu, Southern University of Science and Technology, China

 
CMOS-Compatible Contact Technology for Si Photonics

Philipp Rodriguez, Univ. Grenoble Alpes, France

 
H2 PLAD Hydrogenation Process on 3D NAND Array Poly-Si Access Devices

Shu Qin, QinTek, Co., USA

 
Monolayer doping and other strategies in high surface-to volume-ratio silicon devices

Ray Duffy, Tyndall National Inst., Ireland

 
Novel photodetector based on FD-SOI substrate with interface coupling effect

Jing Wan, Fudan University, China

 
Novel titanium based contacts featuring ultralow contact resistivities and enhanced compatibilities to advanced CMOS technology

Hao Yu, IMEC, Belgium

 
On the manifestation of Ge Pre-amorphization Implantation (PAI) Impact on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts for sub-16/14 nm nodes and beyond

Jun Luo, IMECAS, China

 
Opportunities for breaking an energy generation limit of photovoltaic using multijunction and super-multijunction cells

Kenji Araki , Toyota Technological Institute, Japan

 
Light Plastic Integrated Micro CPV Module: PIC with Three-Junction PV cells

Michihiko Takase, Panasonic Corporation, Japan

 
Gate stack and Ni(SiGeSn) metal contacts formation on low bandgap strained (Si)Ge(Sn) semiconductors

Dan Buca, Peter Gr┨nberg Institute (PGI 9) and JARA-FIT, Germany

 
High-performance heterojunctions based on 2D semiconductors

Yanqing Wu, Huazhong University of Science and Technology, China

 
Impact of the end of CMOS minuaturization and the world after that

Hiroshi Iwai, Tokyo Institute of Technology, Japan

 
Damage recovery and strain induced by Phosphorous in Laser Annealed Ge

Simona Boninelli, IMM-CNR, Italy